TC59S6416BFTL-10 מפרטים ו-APPLICATION
Electronic Parts: TC59S6416BFTL-10 
יצרן: Toshiba Semiconductor
אריזה:
יישום: 1m4161m416
סיכות:
טמפרטורה: מינימום °C | מקס °C
גודל: KB
TC59S6416BFTL-10 PDF
Datasheet PDF :
TC59S6416BFTL-10 מודל דומה:
- TC59S6416BFT
DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC - TC59S6416BFT-80
DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC - TC59S6416BFT/BFTL-80
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM - TC59S6416BFT/BFTL10
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM - TC59S6416BFTBFTL-80
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT SYNCHRONOUS DYNAMIC - TC59S6416BFTBFTL10
1,048,576/2,097,152/4,194,304-WORDSX4BANKSX16/8/4-BIT SYNCHRONOUS DYNAMIC - TC59S6416BFTL
DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC - TC59S6416BFTL-10
1M Word x 4 Banks x 16 Bits Synchronous Dynamic RAM(1M ??x 4??x 16 ?????????RAM)