2SC3376 מפרטים ו-APPLICATION
Electronic Parts: 2SC3376 
יצרן: Toshiba
אריזה:
יישום:
סיכות:
טמפרטורה: מינימום °C | מקס °C
גודל: KB
2SC3376 PDF
Datasheet PDF : View
2SC3376 מודל דומה:
- 2SC3000
Epitaxial Planar Silicon Transistor - 2SC3000D
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3000E
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3000F
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3001
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3004
Silicon NPN Epitaxial(???NPN????? - 2SC3006
TRANSISTOR BAND POWER AMPLIFIER APPLICATIONS) - 2SC3007
SILICON EPITAXIAL TYPE PROCESS) - 2SC3011
UHF~C BAND NOISE AMPLIFIER APPLICATIONS - 2SC3012
SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR - 2SC3017
EPITAXIAL PLANAR TYPE - 2SC3018
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3019
EPITAXIAL PLANAR TYPE - 2SC3020
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - 2SC3021
EPITAXIAL PLANAR TYPE POWER TRANSISTOR)